Abstract GaN-on-Silicon power devices are recognized as a key technology to sustain future power converter systems roadmaps in the field of IT electronics, renewable solar and emission free automotive applications. Exagan implemented proprietary 200-mmâ€™s GaN-on-Silicon technologies into high volume production to enable higher integration and improved efficiency. G-FETâ„¢ & G-Driveâ„¢ Exagan product portfolio provides GaN-on-Silicon solutions that enable a new generation of power electronics. This paper will present the latest products and tools to be released to leverage on cost effective G-Stackâ„¢ 200-mmâ€™s GaN-on-Silicon proprietary technology.
Eric Moreau is in charge of the global New Product Introduction (NPI) & Applications activities and Director of the Exagan Toulouse site office. With more than 28 years in semiconductor industry at Motorola/Freescale and NXP, Eric served as Global Automotive Standard Products Business Development Manager, EMEA Product Definition and Applications Manager for the Analog, Mixed Signal and Power Product Division, he left NXP as chairman of the Global Functional Safety Manager for the Analog and Sensor Group. He managed organizations that introduce for the Automotive and Industrial markets, intelligent Smart Power Switches, Smart MosFET pre-drivers, diverse smart combination of low & high side drivers for actuators/motor controls and controllers, advanced ASIL D System Basis Chip for safety critical micro-controllers, drivers and sensors.
Eric has a graduate degree in Electrical Engineering from Franceâ€™s Ecole Centrale de lâ€™Electronique de Paris.