Problematic for thermal cycling during die-attach and during mission profile in power electronics is the mismatch of coefficients of thermal expansion (CTE) of copper and semiconductor (17ppm/K for Cu, around 3-5ppm/K for Si, SiC, GaN) that leads to mechanical stress possibly destroying the brittle semiconductor. Metal ceramic substrates (MCS) mitigate this problem. They typically consist of a stack of bottom and top copper sheets separated by a ceramic sheet. This ceramic sheet has three basic functions: 1) confining the high CTE of the copper, 2) electrically insulating the top copper sheet carrying electric power from the grounded bottom sheet, while 3) providing thermal conductivity for the excess heat to be dissipated. An outstanding level of reliability can be achieved using silicon nitride ceramics (Si3N4), offering a high thermal conductivity combined with an excellent mechanical robustness (high bending strength and high fracture toughness) compared to standard MCS, which are alumina based and direct copper bonded (DCB) substrates. To attach copper sheets to a silicon nitride sheet, an active metal brazing (AMB) process must be applied, forming a 10-30Âµm thick very strong brazing zone. It is so strong that copper sheets of up to 1mm thickness can be applied to the ceramic, having typical thicknesses of 0.32mm and 0.25mm. The outstanding thermal dissipation performance and mechanical robustness of ConduraÂ®.prime enables power modules with highest power densities. Combined with customized mAgic silver sinter paste for die-attach and top side connection materials like aluminum thick bonding wires and ribbons, copper and coated copper bonding wires (CuCorAlÂ®) and most importantly the Die Top System (DTSÂ®), HET enables its customers using the full potential of wide-bandgap semiconductors (SiC, GaN).