T40 - Wide Bandgap Device and Circuit Modeling

Presentations:

• 1:45 PM – 2:05 PM

  Drain Current Characteristics of Enhancement Mode GaN HEMTs
• 2:05 PM – 2:25 PM

  Modelling GaN-HEMT Dynamic ON-State Resistance in High Frequency Power Converter
• 2:25 PM – 2:45 PM

  Analytical Modeling of Switching Characteristics of the SiC MOSFET Based on Finite State Machine
• 2:45 PM – 3:05 PM

  Modeling and Validation of Medium Voltage SiC Power Modules
• 3:05 PM – 3:25 PM

  Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters