T20 - SiC Devices and Components

1st Chair(s)

• Ali Salith

  ON Semiconductor

2nd Chair(s)

• Rajib Datta

  GE Research

Presentations:

• 2:30 PM – 2:50 PM

  Impact of Submodule Voltage Sensor Noise in 10 kV SiC MOSFET Modular Multilevel Converters (MMCs) Under High dv/dt Environment
• 2:50 PM – 3:10 PM

  An Efficiency Improvement Method for Si/SiC Hybrid Switch Based Inverter
• 3:10 PM – 3:30 PM

  Utilizing Electroluminescence of SiC MOSFETs for Unified Junction-Temperature and Current Sensing
• 3:30 PM – 3:50 PM

  Investigation on Effects of Thermal Stress on SiC MOSFET Degradation Through Power Cycling Tests
• 3:50 PM – 4:10 PM

  Comparative Evaluation of Surge Current Capability of the Body Diode of SiC JMOS, SiC DMOS, and SiC Schottky Barrier Diode
• 4:20 PM – 4:40 PM

  Characterization of 1200V 300A SiC MOSFET Switching Performance Dependence on Load-Cable-Output Filter and Control Deadtime Optimization
• 4:40 PM – 5:00 PM

  Measure the Thermal Parameters of SiC MOSFET Through Case Temperature
• 5:00 PM – 5:20 PM

  A High-Density Single-Turn Inductor for a 6 kV SiC-Based Power Electronics Building Block
• 5:20 PM – 5:40 PM

  Robustness Evaluation and Degradation Mechanisms of SiC MOSFETs Overstressed by Switched Stimuli