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Technical Lecture Session
Technical Lecture Session
T20 - SiC Devices and Components
Wednesday, March 18, 2020
2:30 PM – 5:40 PM
Location: 206-207
1st Chair(s)
Ali Salith
ON Semiconductor
2nd Chair(s)
Rajib Datta
GE Research
Presentations:
2:30 PM – 2:50 PM
Impact of Submodule Voltage Sensor Noise in 10 kV SiC MOSFET Modular Multilevel Converters (MMCs) Under High dv/dt Environment
2:50 PM – 3:10 PM
An Efficiency Improvement Method for Si/SiC Hybrid Switch Based Inverter
3:10 PM – 3:30 PM
Utilizing Electroluminescence of SiC MOSFETs for Unified Junction-Temperature and Current Sensing
3:30 PM – 3:50 PM
Investigation on Effects of Thermal Stress on SiC MOSFET Degradation Through Power Cycling Tests
3:50 PM – 4:10 PM
Comparative Evaluation of Surge Current Capability of the Body Diode of SiC JMOS, SiC DMOS, and SiC Schottky Barrier Diode
4:20 PM – 4:40 PM
Characterization of 1200V 300A SiC MOSFET Switching Performance Dependence on Load-Cable-Output Filter and Control Deadtime Optimization
4:40 PM – 5:00 PM
Measure the Thermal Parameters of SiC MOSFET Through Case Temperature
5:00 PM – 5:20 PM
A High-Density Single-Turn Inductor for a 6 kV SiC-Based Power Electronics Building Block
5:20 PM – 5:40 PM
Robustness Evaluation and Degradation Mechanisms of SiC MOSFETs Overstressed by Switched Stimuli