IS04 - Si and Wide Bandgap Switch Performance

1st Chair(s)

• Jaume Roig, PhD

  Senior Principal
  ON Semiconductor

2nd Chair(s)

• Stephanie Watts Butler

  Texas Instruments Inc.

Presentations:

• 8:30 AM – 8:55 AM

  SiC MOSFET Corner and Statistical SPICE Model Generation
• 8:55 AM – 9:20 AM

  Power Conversion Switch Technology: The Who, When , Where and Why of using Si, SiC and GaN Transistors
• 9:20 AM – 9:45 AM

  The Path Forward for GaN Power
• 9:45 AM – 10:10 AM

  200-mm GaN-On-Silicon Intelligent Power Solutions to Boost Performance of a New Generation of Power Converters
• 10:40 AM – 11:05 AM

  Advances Through Innovation: Transphorm Changes the Game with Gen-IV SuperGaNTM 650V GaN Platform
• 11:05 AM – 11:30 AM

  Rugged, High-Performance 650 —1200V SiC MOSFETs with Flawless Gate Oxide Integrity
• 11:30 AM – 11:55 AM

  Use of 3300V SiC MOSFETs and 1700 V SiC Diodes in Modern Applications