Xi Jiang

Hunan University

Xi Jiang is currently pursuing the Ph.D. degree in Electric Engineering in the College of Electrical and Information Engineering, Hunan University, Changsha, China. His research interests include the reliability of Silicon Carbide power semiconductor devices and modules, power device modeling, intelligent gate drivers, and their applications in power electronics systems.

Presentation(s):

• T20.4 - Investigation on Effects of Thermal Stress on SiC MOSFET Degradation Through Power Cycling Tests

  Wednesday, March 18, 2020
  3:30 PM – 3:50 PM

• T20.5 - Comparative Evaluation of Surge Current Capability of the Body Diode of SiC JMOS, SiC DMOS, and SiC Schottky Barrier Diode

  Wednesday, March 18, 2020
  3:50 PM – 4:10 PM

• D08.11 - A Novel Real-Time Junction Temperature Monitoring Circuit for SiC MOSFET

  Thursday, March 19, 2020
  11:15 AM – 1:45 PM