Device and Component Modeling
Technical Dialogue Session
Modeling of Components and SiC Devices
SiC MOSFET, module, surge voltage, embedded capacitor
This paper presents a method for predicting the turn-off surge voltage of a power module (PM) with SiC MOSFETs structuring half-bridge and a DC-link decoupling capacitor embedded therein. The method is based on multiple Kirchhoff's laws-based equations reflecting the circuit equivalent to a double pulse test of the PM, and the authors simulate the turn-off waveforms of the MOSFETs in the switching-side. A partial element equivalent circuit method is used to estimate the stray inductances of the PM. This semi-theoretical setup enables the prediction of Vds waveforms, which corresponded very well with measured counterparts, thereby validating the effectiveness of this proposed simulation scheme.