Circuits and Systems
Technical Dialogue Session
Modeling of Components and SiC Devices
MOSFETs, Device Modeling, Leakage Current, EMI, Silicon Carbide (SIC)
This paper describes conducted Electromagnetic Interference simulation of a power converter using a compact model for an SiC-MOSFET. The model accurately simulates the peak values of leakage current flowing out of a heat sink ileak. Additionally, the simulated spectrum of conducted dis-turbance voltage shows good agreement with the experimental one up to 20 MHz with a maxi-mum error of 6 dB. From 20 to 30 MHz, the simulated spectrum shows the similar peak values to the experimental one with a little deviation in the resonant frequency.