Device and Component Modeling
Technical Dialogue Session
Modeling of Components and SiC Devices
SiC, switching modeling, parasitic effect
This paper make an analytical model to analysis the SiC MOSFET switching behavior. Compared to traditional model, it consider the non-linearity trans-conductance. It also take the parasitic inductance, non-linearity parasitic capacitance into consideration. Temperature effect is updated by transfer characteristic measurement under different temperature. Preliminary double pulse testing shows that the model has high accuracy.