Gate Drive and Signal Path Components
Technical Dialogue Session
Devices and Components II
Gate driver, parallelization, temperature monitoring, high current, GaN, SiC, WBG
A new Gate Driver circuit is proposed, which can detect the power transistors' junction temperature and drain current by utilizing the gate leakage current. Dynamic current balancing between parallel connected transistors as well as a fast and reliable overload/short circuit protection without any additional sensing components in the power module or on the power board can be realized.By simple modification of the conventional gate driver an inherently safe, more reliable power electronics equipment (AC/DC, DC/DC, Motor Drive Inverters) based on new WBG transistors can be obtained.