Technical Dialogue Session
Devices and Components I
GaN, GaN HEMT, Surge performance, Flyback
In this paper, we have evaluated the surge robustness of a GaN FET-based Flyback power supply and demonstrated the maturity of GaN technology for adoption into high-volume markets. Surge testing is based on the IEC 61000-4-5 and VDE 0884-11 standards, and we have shown in this work that GaN FETs survive the surge events without any hard failure or change in converter efficiency under both 265VAC and 90VAC line conditions. GaN FETs have been shown to switch through with peak voltage over 800V, and for tens of milliseconds while exceeding the maximum continuously operating voltage rating of 650V.