Technical Dialogue Session
Devices and Components I
Wide Band Gap, GaN, Cross Conduction, Shoot-through, Double Pulse Test
The solution for GaN half bridge cross-conduction diagnosing is discussed because the high-side VGS is challenging to be measured with the traditional probes. The optical isolated Measurement System (Tektronix IsoVu) provides a feasible solution, nevertheless suffers from the high cost as well as its sensitivity to the signal path. An inexpensive and safer cross-conduction diagnostic method has been proposed for a GaN half bridge. The diagnostic method has been illustrated step by step in the paper using the 25 mΩ RDS_on 650V GaN HEMT GS66516T as an example, both No cross-conduction and With cross-conduction conditions are included.