Power Silicon MOSFETs, BJTs, IGBTs
Technical Dialogue Session
Devices and Components I
MOSFET, body diode, resonant, failures, fast diode, reverse recovery
The aim of this paper is to evaluate and understand the failure mechanism due to reverse recovery of the intrinsic body diode of the Super Junction MOSFET, both in terms of physically process internally on the device and at the converter level. Nowadays the higher reliability and theoretically failure free system is highly request in order to maintain the continuity of service in typical telecom or server applications. Moreover, a solution for this problem based on fast recovery diode SJ MOSFET from MDmesh™ technology from STMicroelectronics was proposed.