Device and Component Modeling
Technical Lecture Session
Wide Bandgap Device and Circuit Modeling
Silicon carbide MOSFET, Analytical model, Switching Characteristic, Finite State Machine, Circuit Simulation
Analytical modeling is usually applied to evaluate the switching characteristics of the silicon carbide (SiC) MOSFET. An analytical model based on finite-state-machine (FSM) is proposed to comprehensively assess the performance of the SiC MOSFET. Compared with other analytical models, the switching transient during turn-on and turn-off is intuitively illustrated by FSM with state-flow, and the output of the FSM is connected to the electrical interface, which makes circuit simulation accessible. Therefore, the model is expected to provide much assistance to engineers during early designing stages. The validity of the model is verified with relative experimental results.