Device and Component Modeling
Technical Lecture Session
Wide Bandgap Device and Circuit Modeling
Silicon Carbide, Double Pulse Test, Medium Voltage, Die Modeling, wide bandgap, SPICE, MOSFET
A 6.5 kV Silicon Carbide behavioral die model has been developed for use in SPICE simulation. A half-bridge power module with multiple 6.5 kV die at each switch position was evaluated in DPT up to 5 kV and 800 A. The die model was fit into a half-bridge configuration with the appropriate parasitic model and compared to the empirical results.