Power Modules / High Density Design
Technical Lecture Session
Design Techniques for SiC-based Power Converters
SiC, MOSFET, fast switching, active snubber, asymmetric stray inductance
In this paper, a medium power SiC-MOSFET module is presented with an integrated active snubber that makes use of the energy in the stray inductance. It is compared with two other topologies, a typical halfbridge and a halfbridge with integrated DC snubber. The three topologies are tested in identical setups for hard-switching operation at 600V and 350A, all with similar DBC-layout. It is shown that the voltage overshoot, the tendency to oscillate, and the system losses are strongly decreased due to the active snubber.