Power Electronics Packaging
Technical Lecture Session
Design Techniques for SiC-based Power Converters
Sinter Ag joining, DBA substrate, High temperature reliability, SiC Power modules
In this work, we report a robust Ag sinter joining of SiC die on a bare Direct Bonded Aluminum (DBA) substrate, one of the mostly used substrates in power electronics, and whole sintering processes are accomplished at a pressureless, low-temperature, and atmospheric condition. The shear strength achieved about 26 MPa at a sintering temperature of 250°C. In addition, SiC thermal engineering group (TEG) chip was designed and applied for thermal characterization evaluation of power module by Ag sinter joining on the DBA substrate. Furthermore, the characterization and fracture behavior of high temperature compatible encapsulation resins on the bare DBA substrate was also evaluated. The bonding mechanism and high temperature storage performance at 250°C as well as power cycling by SiC-TEG chip are discussed in detail for the direct bonding on the bare DBA structure.