Technical Lecture Session
GaN/Si Devices and Components
GaN-on-Si, E-mode, HEMT, reliability, packaging, 200mm, system
200mm E-mode 40-650V GaN-on-Si power HEMTs are presented, featuring state of the art electrical performance, low parasitic and easy to use package, successful JEDEC qualification, dynamic Rdson free and high system efficiency. To the authors' knowledge, it is for the first time the 200mm GaN-on-Si power technology is massive adoption ready for power electronics industry.