Fast Recovery Diodes
Technical Lecture Session
GaN/Si Devices and Components
Wide Bandgap, Semiconductor Devices, Power Conversion, Sensing and Measurement
This paper proposes a method of monitoring light emission from wide-bandgap III-N power devices which will determine the on-state current in the device needed for power electronic converter control. Measurement of current is accomplished via real-time measurement of the spectral content of light emission from a III-N device under forward steady-state bias. Measurements of the spectral content about these peaks is calibrated versus varying on-state currents and junction temperatures of a representative GaN PN device. These measurements are then used to demonstrate a proof-of-concept extraction of real-time temperature and current variation under a test waveform.