Technical Lecture Session
GaN/Si Devices and Components
GaN HEMT, switching loss, double pulse test (DPT), half bridge, dynamic characterization
The faster switching speed of GaN makes it difficult for device dynamic characterization because it is more sensitive to the parasitic components in the circuit. Double Pulse Test (DPT) is commonly used to characterize device dynamic performance but any coaxial shunt to measure drain current will insert enough parasitic inductance to influence switching performance and impact measurement results. In this paper, a novel and simple method is proposed to accurately evaluate switching loss without shunt resistor in series with GaN device in a half bridge configuration. A 130 W GaN based buck converter prototype is built to verify the proposed method.