Power Electronics Packaging
Technical Lecture Session
Reliability of Power Conversion Systems
GaN package, device integration, low parasitics
Packaging of gallium nitride (GaN) HEMTs is challenging due to their high heat-flux density and small bonding pads. And, having a lateral device structure and being able to switch fast, these devices push the limit of packaging by demanding extremely low parasitic inductances. In this work, we developed a packaging approach based on embedding the GaN device chip between a printed-circuit board (PCB) interposer structure for terminal interconnection and a direct-bond-copper (DBC) substrate for heat extraction. The approach was demonstrated by packaging 650 V, 120 A GaN HEMT bare die.