Technical Lecture Session
GaN/Si Devices and Components
Solid State Circuit Breaker (SSCB), GaN, Bidirectional switch, Gate drive circuit, Short-circuit current, DC power distribution system
A solid state circuit breaker (SSCB) using monolithic GaN bidirectional switch driven by two-step gate-discharging circuit is demonstrated. A GaN bidirectional switch with dual-gate structure based on gate injection transistor (GIT) is employed to reduce on-state resistance instead of series-connected transistors which are commonly used. Furthermore, a two-step gate-discharging technique which prevent both short-circuit current and surge voltage from increasing at switching period of turn-off is proposed. The fabricated SSCB exhibits interruption for short-circuit current of 100 A under the DC-bus voltage of 380 V within 0.9 μs with no surge voltage.