Power Silicon MOSFETs, BJTs, IGBTs
Technical Lecture Session
GaN/Si Devices and Components
IGBT, Gate Controllability, Power Switches, Power Semiconductor Devices
The 1.2 kV trench IGBT switching behavior focusing on the Dynamic Avalanche (DA) was analyzed through 3D TCAD models for the first time. Management of the electric field beneath the trench gate is the most critical to minimize the DA. Moreover, a DA free turn-off operation is demonstrated in a TCIGBT through in both simulation and experiment. As a MOS controlled thyristor device, TCIGBT can be operated with very low power losses and at high current densities without DA and provides high design flexibility for power electronics systems by high dV/dt controllability.