In his 25 year career in the PV solar industry, Henry Hieslmair has held numerous senior level positions and consulted for many firms in the PV manufacturing industry. He began his PV career with an internship at Siemens Solar Industries in Camarillo CA followed by his materials science graduate and post-graduate work at U.C. Berkeley and Lawrence Berkeley Laboratories on multi and mono-crystalline silicon defects and processing for PV. He has a wide range of experiences in developing technologies for silicon photovoltaics including impurity gettering and defect mitigation processes, thin silicon and kerfless silicon fabrication, laser doping and processing of silicon, nanoparticle dopant inks, inkjetting of metals and dopants, high-throughput phosphorus and boron ion implantation, and new emitter doping patterns for improved efficiencies. He has authored or co-authored over 50 conference and journal articles, most recently focused on light induced degradation effects and time constants, understanding effects of silicon properties on modern PERC cell characteristics, novel emitter doping patterns enabled by ion implantation, and trends in extended duration module testing. He is currently a principal engineer with DNV GL focused on module reliability.
Thursday, September 27
11:00 AM – 12:40 PM